| PART |
Description |
Maker |
| SI4820DY-E3 |
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| SUB50P05-13LT |
50 A, 55 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET D2PAK-5
|
Vishay Intertechnology, Inc.
|
| FCH072N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 52A, 72m
|
Fairchild Semiconductor
|
| IRGPC50K |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 52A I(C) | TO-247AC
|
|
| SI4410DY |
RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
| IRF7424TR IRF7424 |
11 A, 30 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SPP10N10L |
Power MOSFET, 100V, TO-220, RDSon=154mOhm, 10A, LL
|
Infineon
|
| MIC94084 MIC94082 MIC94080 MIC94081 |
(MIC94080 - MIC94085) RDSON 2A High Side Load Switch
|
Micrel Semiconductor
|
|
